Ion Implantation

Any energy from 30-400 keV:

H, D, He, Li, Be, B, C, N, 16O, 18O, F, Si, Cl, Ar, Ca, 63Cu, 65Cu, Zn, Ge, As, Se, Kr, Zr, Pd, Ag, Xe, Cs, Ce, Pb

(PLEASE INQUIRE FOR OTHER IONS AND ISOTOPICALLY SEPARATED SPECIES)

MeV ion implantation and materials modification: 300 keV to 4.2 MeV.

1 thru 4 in wafers, very wide range of ions.

1 thru 8 inch wafers, all shapes:

H, D, 3He, 4He, 10B, 11B, 12C, 14N, 15N, 16O, F, Ne, P, Cl, Ar, Kr, Xe

Doses from 1x1012/cm2 to 1x1016/cm2 (higher doses for small sizes).

Quantitative Hydrogen profiling to 1.5 microns depth (less in dense materials).

Depth resolution ~ 10 nanometers, sensitivity ~ 100 ppm atomic.

Quantitative Fluorine profiling to 1.5 microns.

Depth resolution ~ 25 nanometers, sensitivity ~ 100 ppm atomic.

Analysis by RBS, Channeling and Nuclear Reaction Analysis (NRA).

Depth resolution 10 to 100 nanometers, composition and concentration profile for most elements (sensitivity

10% for light elements, up to ppm for heavy elements).

Analysis by Scanning Nuclear Microprobe using RBS and PIXE.

Surface resolution to 1 micron, depth resolution 10 to 100 nanometers, composition and profile for most

elements (sensitivity as above).

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